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| FDS4141_F085 P-Channel PowerTrench(R) MOSFET May 2009 FDS4141_F085 (R) P-Channel PowerTrench MOSFET -40V, -10.8A, 19.0m Features Typ rDS(on) = 10.5m at VGS = -10V, ID = -10.5A Typ rDS(on) = 14.8m at VGS = -4.5V, ID = -8.4A Typ Qg(TOT) = 35nC at VGS = -10V High performance trench technology for extremely low rDS(on) RoHS Compliant Qualified to AEC Q101 Applications Control switch in synchronous & non-synchronous buck Load switch Inverter D D D D D D SO-8 S Pin 1 S G S D 8 1 S 6 7 3 2 S S D 5 4 G (c)2009 Fairchild Semiconductor Corporation FDS4141_F085 Rev. A 1 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench(R) MOSFET MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Parameter Ratings -40 20 -10.8 -36 229 1.6 -55 to +150 Units V V A mJ W oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RJC RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SO-8, 1in2 copper pad area 30 81 o C/W oC/W Package Marking and Ordering Information Device Marking FDS4141 Device FDS4141_F085 Package SO-8 Reel Size 13" Tape Width 12mm Quantity 2500 units Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V VDS = -32V, VGS = 20V, -40 -1 100 V A nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250A ID = -10.5A, VGS = -10V rDS(on) Drain to Source On Resistance ID = -8.4A, VGS = -4.5V ID = -10.5A, VGS = -10V, TJ = 125oC ID = -10.5A, VDD = -5V -1.0 -1.7 10.5 14.8 15.3 34 -3.0 13.0 19.0 19.0 S m V gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Rg Qg(TOT) Qg(-5) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at -10V Total Gate Charge at -5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to -10V VGS = 0 to -5V VDD = -20V ID = -10.5A 2005 355 190 5.0 35 18.6 5.2 6.6 45 24.2 pF pF pF nC nC nC nC FDS4141_F085 Rev. A 2 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench(R) MOSFET Electrical Characteristics TA = 25oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = -20V, ID = -10.5A VGS = -10V, RGEN = 6 9.7 4.4 41 11.6 25 84 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Notes: 1: Starting TJ = 25oC, L = 6.2mH, IAS = -8.6A Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = -10.5A ISD = -2.1A IF = -10.5A, dSD/dt = 100A/s - -0.8 -0.7 26 13.4 -1.3 -1.2 34 17.4 V ns nC This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDS4141_F085 Rev. A 3 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench(R) MOSFET Typical Characteristics POWER DISSIPATION MULTIPLIER 1.2 -ID, DRAIN CURRENT (A) 9 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TA, CASE TEMPERATURE (oC) 150 VGS = -10V 6 VGS = -4.5V 3 RJA = 81 C/W o 0 25 50 75 100 125 TA, CASE TEMPERATURE (oC) 150 Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE - DESCENDING ORDER Figure 2. Maximum Continuous Drain Current vs Ambient Temperature 0.1 0.01 D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 81 C/W 0.001 -3 10 10 -2 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 VGS = -10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 1 10 t, RECTANGULAR PULSE DURATION (s) -1 10 2 10 3 -IDM, PEAK CURRENT (A) 100 I = I25 150 - TA 125 10 SINGLE PULSE o RJA = 81 C/W 1 -3 10 10 -2 10 1 10 t, RECTANGULAR PULSE DURATION(s) -1 10 2 10 3 Figure 4. Peak Current Capability FDS4141_F085 Rev. A 4 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench(R) MOSFET Typical Characteristics 100 -ID, DRAIN CURRENT (A) 60 -IAS, AVALANCHE CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 1ms 10 1 STARTING TJ = 25oC 10ms 100ms 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED o TA = 25 C 1s DC STARTING TJ = 150oC 0.01 0.01 0.1 1 10 100 300 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability 36 -ID, DRAIN CURRENT (A) 36 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) 27 VDD = -5V 27 VGS = -10V VGS = -4.5V VGS = -4V VGS = -3.5V VGS = -3V 18 TJ = 150oC 18 9 TJ = 25oC TJ = -55oC 9 0 0 1 2 3 -VGS, GATE TO SOURCE VOLTAGE (V) 4 0 0 1 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) 3 Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) ID = -10.5A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = -10.5A VGS = -10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 40 30 TJ = 150oC 20 10 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 TJ = 25oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDS4141_F085 Rev. A 5 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench(R) MOSFET Typical Characteristics NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 NORMALIZED GATE THRESHOLD VOLTAGE 1.10 VGS = VDS ID = -250A ID = -1mA 1.2 1.0 0.8 0.6 0.4 -75 1.05 1.00 0.95 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 4000 CAPACITANCE (pF) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature -VGS, GATE TO SOURCE VOLTAGE (V) 10 ID = -10.5A Ciss 8 VDD = -20V 6 VDD = -15V 4 2 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) 35 40 VDD = -25V 1000 Coss f = 1MHz VGS = 0V Crss 100 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 60 Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage FDS4141_F085 Rev. A 6 www.fairchildsemi.com FDS4141_F085 P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM F-PFSTM PowerTrench(R) The Power Franchise(R) Build it NowTM PowerXSTM FRFET(R) (R) Global Power ResourceSM CorePLUSTM Programmable Active DroopTM (R) Green FPSTM CorePOWERTM QFET TinyBoostTM QSTM CROSSVOLTTM Green FPSTM e-SeriesTM TinyBuckTM Quiet SeriesTM CTLTM GmaxTM TinyLogic(R) RapidConfigureTM Current Transfer LogicTM GTOTM TINYOPTOTM EcoSPARK(R) IntelliMAXTM TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM Saving our world, 1mW /W /kW at a timeTM EZSWITCHTM * MegaBuckTM TinyWireTM TM* SmartMaxTM MICROCOUPLERTM TriFault DetectTM SMART STARTTM MicroFETTM TRUECURRENTTM* SPM(R) MicroPakTM (R) SerDesTM STEALTHTM MillerDriveTM Fairchild(R) SuperFETTM MotionMaxTM Fairchild Semiconductor(R) SuperSOTTM-3 Motion-SPMTM FACT Quiet SeriesTM UHC(R) SuperSOTTM-6 OPTOLOGIC(R) (R) (R) FACT OPTOPLANAR Ultra FRFETTM SuperSOTTM-8 (R) FAST(R) UniFETTM SupreMOSTM FastvCoreTM VCXTM SyncFETTM FETBenchTM VisualMaxTM Sync-LockTM PDP SPMTM (R) FlashWriter * XSTM (R)* Power-SPMTM FPSTM tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDS4141_F085 Rev. A 7 www.fairchildsemi.com |
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